UM9926B
20V Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The UM9926B is the N-Channel logic enhancement mode power field effect
transistor is produced using high cell density advanced trench technology.
.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.
FEATURE
20V/5.
8A, RDS(ON)=18mΩ (typ.
)@VGS=10V 20V/5.
0A, RDS(ON)=24mΩ (typ.
)@VGS=4.
5V 20V/3.
5A, RDS(ON)=30mΩ (typ.
)@VGS=2.
5V Super high design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC
current capability Full RoHS...