Semiconductor
July 1998
IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3
0.
4A and 0.
5A, 60V and 100V, 2.
4 and 3.
2 Ohm, N-Channel Power MOSFETs
Features
• 0.
4A and 0.
5A, 60V and 100V • rDS(ON) = 2.
4Ω and 3.
2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate power field effect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requ...