ADV
ADM50N06
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS 60V
ID 50A
RDS(ON) (mΩ) 20mΩ
TO220C
Features:
● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant
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Description:
The ADM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Te...