ADV
ADM90N03E
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS 30V
ID 90A
RDS(ON) (mΩ) 4.
0mΩ
TO252
2
1 2
3
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴
TC=25°C
ID Continuous Drain Current
TC=25°C
PD Maximum Power Dissipation 1.
Pulse width limited by maximum junction temperature.
TC=25°C
Thermal Characteristics
Symbol
Parameter
RthJC Rth...