Preliminary Datasheet LPM4953
Dual P -Channel Enhancement Power MOSFET
General Description
The LPM4953 integrates two P-Channel enhancement MOSFET
Transistor.
It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for using in DC-DC conversion, power switch and charging circuit.
Standard Product LPM4953 is Pb-free and Halogen-free.
Features
Trench Technology PMOS: VDS=-15V
RDS(ON) 65mΩ, ID=3.
6A @ VGS=-4.
5V RDS(ON) 42mΩ, ID=5A @ VGS=-10V Super high density cell design Extremely Low Threshold Voltage Small package SOP-8
Order Information
LPM4593 □ □ □ F: Pb-Free
Package Type SO: SOP-8
Applications
Driver for...