Preliminary Datasheet
LPM9017
LPM9017 - -30V/4A P-Channel Enhancement Mode Field Effect
Transistor
General Description
The LPM9017 is the P-channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
Ordering Information
LPM9017- □ □ □
F: Pb-Free
Package Type B3: SOT23
Features
■ -30V/-4A,RDS(ON)＜58mΩ(typ.
)@VGS=-10V ■ -30V/-3.
0A,RDS(ON)＜68mΩ(typ.
)@VGS=-4.
5V ■ Super high density cell ...