Preliminary Datasheet LPM9024
Dual N -Channel Enhancement Power MOSFET
General Description
The LPM9024 integrates two N-Channel enhancement MOSFET
Transistor.
It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for using in DC-DC conversion, power switch and charging circuit.
Standard Product LPM9024 is Pb-free and Halogen-free.
Features
Trench Technology Single NMOS: VDS=20V
RDS(ON) 40mΩ @ VGS=2.
5V, ID=5A RDS(ON) 30mΩ @ VGS=4.
5V, ID=5A Super high density cell design Extremely Low Threshold Voltage Small package DFN-6L 2*2mm
Order Information
LPM9022 □ □ □ F: Pb-Free
Package Type QV: DFN-6L
Applications
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