PD55003-E
RF power
transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 3 W with 17dB gain @ 500 MHz / 12.
5 V
Description
The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power
transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 12 V in common source mode at frequencies of up to 1 GHz.
The PD55003 boasts excellent gain, linearity and reliability thanks to ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF.
The PD55003’s superior linearity ...