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PD55025S-E

RF POWER transistor

Description

PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transis...


STMicroelectronics

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