PD57002-E
RF power
transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
Datasheet — production data
Features
■ Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz.
The device is designed for high gain and broadband performance operating in common source mode at 28 V.
It is ideal for digital cellular BTS applications requiring high linearity.
The PowerSO-10 plastic package, designed to offer hi...