Part Number
|
M53D1G1664A |
Manufacturer
|
ESMT |
Description
|
Mobile DDR SDRAM |
Published
|
Sep 20, 2018 |
Detailed Description
|
ESMT
(Prliminary)
M53D1G1664A
Mobile DDR SDRAM
16M x16 Bit x 4 Banks
Mobile DDR SDRAM
Features
JEDEC Standard Inter...
|
Datasheet
|
M53D1G1664A
|
Overview
ESMT
(Prliminary)
M53D1G1664A
Mobile DDR SDRAM
16M x16 Bit x 4 Banks
Mobile DDR SDRAM
Features
JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized.
Differential clock inputs (CLK and CLK )
Four bank operation CAS Latency : 2, 3 Burst Type : Sequential and Interleave Burst Length : 2, 4, 8, 16 Special function support - PASR (Partial Array Self Refresh) - Internal TCSR (Temperature Compensated Self
Refresh) - DS (Drive Strength) - Deep Power Down (DPD) Mode - Status Read Register (SRR)
All inputs except data & DM are sampled at the rising edge of the system clock(CLK) DQS...
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