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BPW96B, BPW96C
Vishay Semiconductors
Silicon
NPN Photo
transistor
94 8391
DESCRIPTION BPW96 is a silicon
NPN photo
transistor with high radiant sensitivity in clear, T-1¾ plastic package.
It is sensitive to visible and near infrared radiation.
FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 20° • Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.
vishay.
com/doc?99902
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