June 2007 PFI7N80G / PFB7N80G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 35 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 1.
55 Ω (Typ.
) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) Green Package PFI7N80G/PFB7N80G 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 1.
9 Ω ID = 7.
0 A TO-262(I2-PAK) 1 2 3 1.
Gate 2.
Drain 3.
Source Drain  Gate  ● ◀▲ ● ●  Source TO-263(D2-PAK) 2 1 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25...

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