N-Channel MOSFET
PFP4N70E / PFF4N70E FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 10 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.45 Ω (Typ.) @VGS=10V Halogen Free APPLICATION Low power battery chargers Switch mod...
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