PFU6N70EGS-H 123 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 13.
6 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 1.
50 Ω (Typ.
) @VGS=10V  Halogen Free APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) Green Package PFU6N70EGS-H 700V N-Channel MOSFET BVDSS = 700 V RDS(on) = 1.
50 Ω ID = 5.
5 A I-PAK(TO-251) Short Lead Drain  Gate  ● ◀▲ ● ●  Source 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter...

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