Part Number
|
PFP12N65E |
Manufacturer
|
Wing On |
Description
|
N-Channel MOSFET |
Published
|
Oct 5, 2018 |
Detailed Description
|
PFP12N65E / PFF12N65E
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low ...
|
Datasheet
|
PFP12N65E
|
Overview
PFP12N65E / PFF12N65E
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 40 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
48 Ω (Typ.
) @VGS=10V
APPLICATION
High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies)
PFP12N65E/PFF12N65E
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 0.
48 Ω ID = 12.
2 A
TO-220
Drain
Gate
●
◀▲
● ●
Source
TO-220F
1 2 3
1.
Gate 2.
Drain 3.
Source
12 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Sy...
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