Sep 2008 PFP10N40 / PFF10N40 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 23 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 0.
44 Ω (Typ.
) @VGS=10V APPLICATION  Electronic lamp ballasts based on half bridge topology  PFC (Power Factor Correction)  SMPS (Switched Mode Power Supplies) PFP10N40 / PFF10N40 400V N-Channel MOSFET BVDSS = 400 V RDS(on) = 0.
55 Ω ID = 10 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.
Gate 2.
Drain 3.
Source 12 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specifi...

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