Aug 2008 PFI8N50 / PFB8N50 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 25 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 0.
7 Ω (Typ.
) @VGS=10V APPLICATION  Electronic lamp ballasts based on half bridge topology  PFC (Power Factor Correction)  SMPS (Switched Mode Power Supplies) PFI8N50/PFB8N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.
85 Ω ID = 8.
0 A Drain  Gate  ● ◀▲ ● ●  Source I2-PAK D2-PAK D G D S G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IA...

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