Advance Product Information 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • 0.
25um pHEMT Technology • DC 22 GHz Frequency Range • 1.
2 dB NF, 14.
5 dB Associated Gain at 10 GHz, 3V Operation • Floating Source Configuration • Chip Dimensions 0.
5080 mm x 0.
4064 mm Primary Applications • Low Noise amplifiers 17 F = 10 GHz Vd = 3 V 15 Iq = 15 mA 13 80 70 60 Power Added Efficiency- Output Power-dBm, Gain-d 11 50 9 40 7 30 5 3 1 -12 -8 -4 0 4 Input Power - dBm Pout (dBm) Gain (dB) PAE (%) 8 20 10 0 12 2.
4 16 F = 10 GHz 2.
2 15 2.
0 14 1.
8 13 Associated Gain - dB Noise Figure - dB 1.
6 12 1.
4 11 1.
2 10 1.
0 0.
8 0.
6 0.
4 5 9 8 7 6 10 15 20 25 30 35 40 45 50 Drain Curre...

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