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Part Number
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S34ML08G1 |
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Manufacturer
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Cypress Semiconductor |
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Description
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NAND Flash Memory |
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Published
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Oct 11, 2018 |
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Detailed Description
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S34ML08G1
8
Gb,
1-bit
ECC, Flash
x8 I/O, 3 V, Memory for
VECmCbNedAdNeDd
General Description
The Cypress S34ML08...
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Datasheet
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S34ML08G1
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Overview
S34ML08G1
8
Gb,
1-bit
ECC, Flash
x8 I/O, 3 V, Memory for
VECmCbNedAdNeDd
General Description
The Cypress S34ML08G1 8-Gb NAND is offered in 3.
3 VCC with x8 I/O interface.
This document contains information for the S34ML08G1 device, which is a dual-die stack of two S34ML04G1 die.
For detailed specifications, please refer to the discrete die datasheet: S34ML04G1.
Distinctive Characteristics
Density – 8 Gb (4 Gb 2)
Architecture (For each 4 Gb device) – Input / Output Bus Width: 8-bits – Page Size: (2048 + 64) bytes; 64 bytes is spare area – Block Size: 64 Pages or (128k + 4k) bytes – Plane Size – 2048 Blocks per Plane or (256M + 8M) bytes – Device Size – 2 Planes per Device or 51...
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