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Part Number
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MD7IC2755NR1 |
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Manufacturer
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NXP |
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Description
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RF LDMOS Wideband Integrated Power Amplifiers |
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Published
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Oct 18, 2018 |
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Detailed Description
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Freescale Semiconductor Technical Data
RF LDMOS Wideband Integrated Power Amplifiers
The MD7IC2755N wideband integrated ...
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Datasheet
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MD7IC2755NR1
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Overview
Freescale Semiconductor Technical Data
RF LDMOS Wideband Integrated Power Amplifiers
The MD7IC2755N wideband integrated circuit is designed with on--chip matching that makes it usable from 2500 -- 2700 MHz.
This multi -- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations.
• Typical Doherty WiMAX Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 80 mA, IDQ2B = 275 mA, VG2A = 1.
7 Vdc, Pout = 10 Watts Avg.
, f = 2700 MHz, OFDM 802.
16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 25 dB Power Added Efficiency — 25% Device Output Signal PAR — 8.
5 dB @ 0.
01% Probability on CC...
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