IDH16G65C6
6th Generation CoolSiC™
650V SiC
Schottky Diode
The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC
Schottky barrier diodes.
The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel
Schottky metal system.
The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF).
The CoolSiC™
Schottky diode 650 V G6 has been designed to complement our 600 V and 650 V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.
Table 1
Key performance parameters
Parameter
Value
Unit
VR...