PD - 94510B AUTOMOTIVE MOSFET IRLR3105 IRLU3105 HEXFET® Power MOSFET Features l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G D VDSS = 55V RDS(on) = 0.
037Ω ID = 25A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)