2N3924 (SILICON)
thru
2N3927
NPN silicon annular RF power
transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz.
CASE 24 2N3925
(TO·102)
Collector electrically connected to case; stud electrically isolated from case
CASE 36 2N3926 2N3927
(TO·60)
Stud and case electrically connected to emitter
CASE 79 2N3924
(TQ.
39)
Collector connected to case
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol 2N3924 2N392S 2N3926 2N3927 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Power DisSipation @' TC = 25° C Derate above 25° C
Operating and Storage Junction Temperature Range
VCEO VCB VEB IC PD
TJ ,...