N-Channel Enhancement Mode Power Mosfet Description The FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ƽ VDS =60V,ID =150A RDS(ON) 4.
5mΩ @ VGS=10V ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation ƽ Special process technology for high ESD capability Application ƽ Power switching application ƽ Hard Switched and High Frequency Circuits ƽ Uninterruptible Power Supply FIR150N06PG PIN Connection TO-220AB GDS Marking Diagram YAWW FI...

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