2N3303 (SILICON)
NPN silicon annular
transistor designed for highspeed, high-current switching and driving applications.
CASE 94 Collector connected to case MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector-Emitter Voltage
VCEO
12 Vdc
Collector-Base Voltage
VCB
25 Vdc
Emitter-Base Voltage
VEB 4.
0 Vdc
Collector Current-Continuous
Total Device Dissipation @ TA =25"C
Derate above 25°C
Total Device Dissipation @ TC =25°C
Derate above 25 °C
Operating and Storage Junction Temperature Range
IC 1.
0 Adc
PD PD TJ , Tstg
0.
6 Watt 3.
43 mW/"C
3.
0 Watts
17.
2 mW/"C
-65 to +200
°c
ELECTRICAL CHARACTERISTICS ITA = 250C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(IeCollecto...