2N30S4A (SILICON)
MEDIUM-POWER
NPN SILICON
TRANSISTOR
· .
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designed for general purpose switching and amplifier applications.
• Aluminum TO·66 Package for Better Power Handling Capability 75 Watts@Tc = 250 C
• Excellent Safe Operating Area • DC Current Gain Specified to 3.
0 Amperes • Complement to
PNP Type 2N6049
MAXIMUM RATINGS Rating
Collector-Emitter Voltage Collector-Emitter Voltage
(RBE = 100 n) Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
Peak Base Current Total Device Dissipation @ T C = 25°C
Derate above 2SoC Operating and Storag~ Junction,
Temperature Range
·Indicates JEOEC Registered Data
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Jun...