2N3296 (SILICON)
NPN silicon annular
transistor for linear amplifier applications from 2 to 100 MHz.
(10-102) Collector connected to case;
stud isolated from case
MAXIMUM RATINGS (Note 1)
Rating
Collector-Base Voltage
Symbol
VCB
Value
60
Unit
Vdc
Collector-Emitter Voltage
VCES
60
Vdc
Emitter-Base Voltage
VEB 3.
0 Vdc
Collector Current (Continuous)
IC
700 mAdc
Base Current (Continuous)
IB
100 mAdc
RF Input Power (Note 2) RF Output Power (Note 2)
P.
10
Pout
1.
0 Watt (PEP) 5.
0 Watts (PEP)
Total Device Dissipation (25°C Case Temperature) Derating Factor above 25°C
Po
6.
0 Watts 40 mW/oC
Total Device Dissipation at (25°C Ambient Temperature) .
.
Derating Factor above 25°C
...