PFP7N60/PFF7N60
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 1.
2 Ω)@VGS=10V ■ Gate Charge (Typ.
35nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
PFF7N60
PFP7N60
1 2 3
12 3
1.
Gate 2.
Drain 3.
Source
General Description
These N-channel enhancement mode field effect power
transistor using Powergate semiconductor’s advanced planar stripe, DMOS technology intended for off line switch mode power supply.
Also, especially designed to minimize RDS(ON) and high rugged avalanche characteristics.
These devices are well suited for high efficiency switching Mode power supplies and active power factor correction.
BVDSS : 600V ID : 7.
0A RDS(ON) : 1.
2ohm
2
1
3
Absolute maxim...