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Part Number
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HY57V281620ELTP |
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Manufacturer
|
Hynix Semiconductor |
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Description
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Synchronous DRAM Memory 128Mbit (8M x 16bit) |
|
Published
|
Nov 14, 2018 |
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Detailed Description
|
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Document Title
4Bank x 2M x 16bits Synchronous DRAM
Revision Histor...
|
|
Datasheet
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HY57V281620ELTP
|
Overview
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Document Title
4Bank x 2M x 16bits Synchronous DRAM
Revision History
Revision No.
History
1.
0 First Version Release
1.
1 1.
Corrected PIN ASSIGNMENT A12 to NC
1.
2
1.
Changed IDD3P and IDD3PS 3mA to 5mA 2.
Added Industrial Temperature (-40oC to 85oC)
1.
3 Changed tOH(Only Symbol ‘H’): 2.
5ns - 2.
7ns
1.
4 Add Super Low Power- IDD6: 500uA
Draft Date Dec.
2004 Jan.
2005 Feb.
2005 Apr.
2005 Aug.
2005
Remark
This document is a general product description and is subject to change without notice.
Hynix Semiconductor does not assume any
responsibility for use of circuits described.
No patent licenses are implied.
Rev.
1.
4 / Aug.
2005
1
...
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