1N2163 thru 1N2171 (SILICON) lN2163A thru lN2171A lN3580, A, Bthru lN3583, A, B TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES Highly reliable reference sources utilizing an oxide-passivated junction for long-term voltage stability.
Construction consists of welded hermetically sealed metal and glass case.
• Low Dynamic Impedance • Choice of Three Temperature Ranges • "Box Method" Specifications Guarantee Maximum Voltage De- viation.
Temperature compensated reference diodes are made by taking advantage of the differing thermal characteristics of forward and reverse biased silicon PN junctions.
A forward biased junction has a negative temperature coefficient of approximately 2.
0 millivoltsfC.
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