Part Number
|
IRFD110 |
Manufacturer
|
Vishay |
Description
|
Power MOSFET |
Published
|
Nov 20, 2018 |
Detailed Description
|
www.vishay.com
IRFD110
Vishay Siliconix
Power MOSFET
D HVMDIP
S G
D
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) ...
|
Datasheet
|
IRFD110
|
Overview
www.
vishay.
com
IRFD110
Vishay Siliconix
Power MOSFET
D HVMDIP
S G
D
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
8.
3 2.
3 3.
8 Single
0.
54
FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • 175 °C Operating Temperature • Fast switching and ease of paralleling • Material categorization: for definitions of compliance
please see www.
vishay.
com/doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package ...
Similar Datasheet