Part Number
|
IRFD123 |
Manufacturer
|
Vishay |
Description
|
Power MOSFET |
Published
|
Nov 20, 2018 |
Detailed Description
|
Power MOSFET
IRFD123, SiHFD123
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
|
Datasheet
|
IRFD123
|
Overview
Power MOSFET
IRFD123, SiHFD123
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
16 4.
4 7.
7 Single
D
0.
27
HVMDIP
S G
D
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The ...
Similar Datasheet