Part Number
|
VS-ETF150Y65N |
Manufacturer
|
Vishay |
Description
|
EMIPAK 2B PressFit Power-Module |
Published
|
Nov 21, 2018 |
Detailed Description
|
www.vishay.com
VS-ETF150Y65N
Vishay Semiconductors
EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage...
|
Datasheet
|
VS-ETF150Y65N
|
Overview
www.
vishay.
com
VS-ETF150Y65N
Vishay Semiconductors
EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 150 A
EMIPAK-2B (package example)
PRIMARY CHARACTERISTICS
Q1 to Q4 IGBT
VCES VCE(on) typical at IC = 150 A
IC at TC = 82 °C Speed
650 V 1.
70 V 150 A 8 kHz to 30 kHz
Package
EMIPAK 2B
Circuit configuration
3-levels half bridge inverter stage
FEATURES • Trench IGBT technology • FRED Pt® clamping diodes • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance • Short circuit rated • Square RBSOA • Integrated thermistor • Low internal inductances • Low switching loss • PressFit pins locking technology.
Patent # US.
263.
820 B2 • UL approved fil...
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