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Part Number
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AFN2408WS |
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Manufacturer
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Alfa-MOS |
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Description
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N-Channel Enhancement Mode MOSFET |
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Published
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Nov 22, 2018 |
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Detailed Description
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Alfa-MOS
Technology
General Description
AFN2408WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
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Datasheet
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AFN2408WS
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Overview
Alfa-MOS
Technology
General Description
AFN2408WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN2X2-6L )
AFN2408WS
30V N-Channel Enhancement Mode MOSFET
Features
z 30V/5.
6A,RDS(ON)=25mΩ@VGS=10V z 30V/5.
2A,RDS(ON)=28mΩ@VGS=4.
5V z 30V/4.
2A,RDS(ON)=34mΩ@VGS=2.
5V z Super high density cell design for extremely
low RDS (ON) z DFN2X2-6L package design
Application
z DC/DC Converter z High Frequency Switching
Pin Define
Pin 1,2,5,6
4 3
Symbol D S ...
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