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Part Number
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AFC2517W |
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Manufacturer
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Alfa-MOS |
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Description
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N & P-Channel Enhancement Mode MOSFET |
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Published
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Nov 22, 2018 |
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Detailed Description
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Alfa-MOS
Technology
General Description
AFC2517W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to...
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Datasheet
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AFC2517W
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Overview
Alfa-MOS
Technology
General Description
AFC2517W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
AFC2517W
20V N & P Pair Enhancement Mode MOSFET
Features
z N-Channel 20V/4.
6A,RDS(ON)=25mΩ@VGS=4.
5V 20V/4.
2A,RDS(ON)=30mΩ@VGS=2.
5V 20V/3.
8A,RDS(ON)=38mΩ@VGS=1.
8V
z P-Channel -20V/-3.
6A,RDS(ON)=52mΩ@VGS=4.
5V -20V/-3.
2A,RDS(ON)=65mΩ@VGS=2.
5V -20V/-1.
2A,RDS(ON)=82mΩ@VGS=1.
8V
z Super high density cell design for extremely low RDS (ON)
z Exceptional on-resistance and maximu...
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