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Part Number
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AFN2912W |
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Manufacturer
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Alfa-MOS |
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Description
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N-Channel Enhancement Mode MOSFET |
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Published
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Nov 22, 2018 |
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Detailed Description
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Alfa-MOS
Technology
General Description
AFN2912W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
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Datasheet
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AFN2912W
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Overview
Alfa-MOS
Technology
General Description
AFN2912W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN2X2-6L )
AFN2912W
20V N-Channel Enhancement Mode MOSFET
Features
z 20V/4.
5A,RDS(ON)=38mΩ@VGS=4.
5V z 20V/3.
6A,RDS(ON)=48mΩ@VGS=2.
5V z 20V/2.
4A,RDS(ON)=68mΩ@VGS=1.
8V z Super high density cell design for extremely
low RDS (ON) z DFN2X2-6L package design
Application
z Power Management in Note book z LED Display z DC-DC System z LCD Panel
Pin Define
P...
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