Part Number
|
AFN2448WS |
Manufacturer
|
Alfa-MOS |
Description
|
N-Channel Enhancement Mode MOSFET |
Published
|
Nov 22, 2018 |
Detailed Description
|
Alfa-MOS
Technology
General Description
AFN2448WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
|
Datasheet
|
AFN2448WS
|
Overview
Alfa-MOS
Technology
General Description
AFN2448WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN2X2-6L )
AFN2448WS
20V N-Channel Enhancement Mode MOSFET
Features
z 20V/3.
0A,RDS(ON)=11mΩ@VGS=4.
5V z 20V/3.
0A,RDS(ON)=13mΩ@VGS=2.
5V z 20V/3.
0A,RDS(ON)=20mΩ@VGS=1.
8V z Super high density cell design for extremely
low RDS (ON) z ESD Protection ( 2KV ) Diode design–in z DFN2X2-6L package design
Application
z For Smart Phones and Mobile Computing - L...
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