Part Number
|
AFN2444WS |
Manufacturer
|
Alfa-MOS |
Description
|
N-Channel Enhancement Mode MOSFET |
Published
|
Nov 22, 2018 |
Detailed Description
|
Alfa-MOS
Technology
General Description
AFN2444WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
|
Datasheet
|
AFN2444WS
|
Overview
Alfa-MOS
Technology
General Description
AFN2444WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN2X2-6L )
AFN2444WS
30V N-Channel Enhancement Mode MOSFET
Features
z 30V/3.
0A,RDS(ON)=15mΩ@VGS=10V z 30V/3.
0A,RDS(ON)=20mΩ@VGS=4.
5V z Super high density cell design for extremely
low RDS (ON) z DFN2X2-6L package design
Application
z DC/DC Converter z High Frequency Switching
Pin Define
Pin 1,2,5,6
4 3
Symbol D S G
Description Drain Source Gate
...
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