Part Number
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AFN3316W |
Manufacturer
|
Alfa-MOS |
Description
|
N-Channel MOSFET |
Published
|
Nov 24, 2018 |
Detailed Description
|
Alfa-MOS
Technology
General Description
AFN3316W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
|
Datasheet
|
AFN3316W
|
Overview
Alfa-MOS
Technology
General Description
AFN3316W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN3X3-8L )
AFN3316W
60V N-Channel Enhancement Mode MOSFET
Features
60V/8A,RDS(ON)=140mΩ@VGS=10V 60V/6A,RDS(ON)=148mΩ@VGS=4.
5V Super high density cell design for extremely
low RDS (ON) DFN3X3-8L package design
Application
DC/DC Converter Load Switch Power Management in Notebook Computer
Pin Define
Pin 1 2 3 4 5 6 7 8
Symbol S S S G D ...
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