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Part Number
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AFN7862WS |
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Manufacturer
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Alfa-MOS |
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Description
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N-Channel MOSFET |
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Published
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Nov 24, 2018 |
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Detailed Description
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Alfa-MOS
Technology
General Description
AFN7862WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
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Datasheet
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AFN7862WS
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Overview
Alfa-MOS
Technology
General Description
AFN7862WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN3X3-8L )
AFN7862WS
60V N-Channel Enhancement Mode MOSFET
Features
60V/ 8.
7A,RDS(ON)=15mΩ@VGS=10V 60V/ 7.
3A,RDS(ON)=17mΩ@VGS=4.
5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability DFN3X3-8L packa...
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