Alfa-MOS Technology General Description AFN4172WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOP-8P ) AFN4172WS 30V N-Channel Enhancement Mode MOSFET Features  30V/15A,RDS(ON)=12mΩ@VGS=10V  30V/13A,RDS(ON)=15mΩ@VGS=4.
5V  Super high density cell design for extremely low RDS (ON)  SOP-8P package design Application  DC/DC Converter  Load Switch  Power Management in Notebook Computer Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)