P-Channel Enhancement Mode Power MOSFET Description The HM16P12D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .
This device is suitable for use as a load switching application and a wide variety of other applications.
General Features ● VDS = -12V,ID = -16A RDS(ON) 22mΩ @ VGS=-2.
5V RDS(ON) 18mΩ @ VGS=-4.
5V ● Advanced trench MOSFET process technology ● Ultra low on-resistance with low gate charge Application ● PWM applications ● Load switch ● Battery charge in cellular handset HM16P12D D G S Schematic diagram Pin assignment DFN2X2-6L bottom view Package marking and ordering information Device Marking Device Device Pack...

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