Part Number
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HM4487 |
Manufacturer
|
H&M Semiconductor |
Description
|
P-Channel Enhancement Mode Power MOSFET |
Published
|
Nov 27, 2018 |
Detailed Description
|
HM4487
P-Channel Enhancement Mode Power MOSFET
Description
The HM4487 uses advanced trench technology and design to pro...
|
Datasheet
|
HM4487
|
Overview
HM4487
P-Channel Enhancement Mode Power MOSFET
Description
The HM4487 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
It is ESD protested.
D G
General Features
● VDS =-100V,ID =-4.
5A RDS(ON) 100mΩ @ VGS=-10V
(Typ:85mΩ)
● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance
S Schematic diagram
HM4487
Application
● Power management in notebook computer ● Portable equipment and battery powered systems
Marking and pin Assignment
100% UIS TESTED! 100% ∆Vds TESTED!
SOP-8 top view
Package Marking and Ord...
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