Part Number
|
HM6801 |
Manufacturer
|
H&M Semiconductor |
Description
|
Dual P-Channel Enhancement Mode Power MOSFET |
Published
|
Nov 27, 2018 |
Detailed Description
|
HM6801
Dual P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM6801 uses advanced trench technology to provide ...
|
Datasheet
|
HM6801
|
Overview
HM6801
Dual P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM6801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
● VDS = -30V,ID = -2.
5A RDS(ON) 130mΩ @ VGS=-10V RDS(ON) 180mΩ @ VGS=-4.
5V
DD GG
SS Schematic diagram
G1 1 S2 2
6 5
D1 S1
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
G2 3 4
D2
Marking and pin Assignment
Application
●PWM applications ●Load switch ●Power management
SOT23-6L top view
Package Marking And Ordering Information
Devic...
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