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Part Number
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HM6602 |
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Manufacturer
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H&M Semiconductor |
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Description
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N & P-Channel Enhancement Mode Power MOSFET |
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Published
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Nov 27, 2018 |
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Detailed Description
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HM6602
N and P-Channel Enhancement Mode Power MOSFET
Description
The HM6602 uses advanced trench technology to provide...
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Datasheet
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HM6602
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Overview
HM6602
N and P-Channel Enhancement Mode Power MOSFET
Description
The HM6602 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge .
This device is suitable for use as a Battery protection or in other Switching application.
General Features
● N-Channel VDS = 30V,ID = 3.
6A RDS(ON) 73mΩ @ VGS=4.
5V RDS(ON) 58mΩ @ VGS=10V
● P-Channel VDS = -30V,ID = -2.
5A RDS(ON) 130mΩ @ VGS=-10V RDS(ON) 180mΩ @ VGS=-4.
5V
D1 D2
G1 S1
N-channel
G2 S2
P-channel
Schematic diagram
G1 1 S2 2 G2 3
6 D1 5 S1
4 D2
Marking and pin Assignment
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Application
●PWM applications ●Load swi...
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