HM' N and P-Channel Enhancement Mode Power MOSFET Description The HM' uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features ● N-Channel VDS = 20V,ID =A RDS(ON) 65mΩ @ VGS=4.
5V RDS(ON) 90mΩ @ VGS=2.
5V ● P-Channel VDS = -20V,ID = -A RDS(ON) 110mΩ @ VGS=-4.
5V RDS(ON) 140mΩ @ VGS=-2.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package N-channel P-channel Pin assignment Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tap...

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