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Part Number
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HM6604 |
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Manufacturer
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H&M Semiconductor |
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Description
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N & P-Channel Enhancement Mode Power MOSFET |
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Published
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Nov 27, 2018 |
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Detailed Description
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HM6604
N and P-Channel Enhancement Mode Power MOSFET
Description
The HM6604 uses advanced trench technology to provide ...
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Datasheet
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HM6604
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Overview
HM6604
N and P-Channel Enhancement Mode Power MOSFET
Description
The HM6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
● N-Channel VDS = 20V,ID =3A RDS(ON) 65mΩ @ VGS=4.
5V RDS(ON) 90mΩ @ VGS=2.
5V
● P-Channel VDS = -20V,ID = -3A RDS(ON) 110mΩ @ VGS=-4.
5V RDS(ON) 140mΩ @ VGS=-2.
5V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
N-channel
P-channel
Marking and pin Assignment
Package Marking and Ordering Information
SOT-23-6L top view
Device Marking Device
...
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