TO-92 Plastic-Encapsulate MOSFETS +07000 V(BR)DSS 60 V MOSFET (N-Channel) RDS(on)MAX  5Ω@10V  6Ω@4.
5V   ID 200mA TO-92 1.
SOURCE 2.
GATE 3.
DRAIN FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability MARKING APPLICATION z Load Switch for Portable Devices z DC/DC Converter Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS ID PD RθJA TJ Tstg Value 60 0.
2 0.
625 200 150 -55 ~+150 Unit V A W ℃/W ℃ MOSFET E...

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