N-Channel Enhancement Mode Power MOSFET Description The HM3N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS = 100V,ID = 3A RDS(ON) 240mΩ @ VGS=10V (Typ:210mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply e PkNMmo D G S Schematic diagram SOT-89-3L top view Package Marking and Ordering Information Device Marking Device Device Package HM3N10PR HM3N10PR...

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